Design and Characterization of 10 Gb/s and 1 Grad TID-Tolerant Optical Modulator Driver

This paper presents the design and experimental characterization of a 10 Gb/s electronic driver for silicon Mach-Zehnder modulators (MZMs). is able to operate in harsh environments characterized by radiation levels up 1 Grad(SiO 2 ) total ionizing dose (TID). To compensate detrimental effects that produces on target 65 nm bulk technology both device- circuit-level hardened (RHBD) techniques are developed implemented. Extreme TID faced using long-channel transistors with enclosed layout, avoiding use p-MOSFETs, implementing differential self-biased cascode architecture common-mode feedback. Band-widening techniques, e.g., inductive peaking, cross-coupled capacitors, buffer chaining, have been used improve driver’s frequency response reach targeted data rate. Electrical measurements show waveforms an eye diagram amplitude suitable MZM driving. Electro-optical performed connecting photonic confirm achievement system-level operability. The hardness verified exposing integrated circuit X-rays. ability work Grad reduction only 10% 7% increment rise fall times, validating effectiveness implemented RHBD techniques.